The study of high temperature annealing of a-SiC : H films

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The study of high temperature annealing of a-SiC : H films
	Zhang, S; Hu, Z; Raniero, L; Liao, X; Ferreira, I; Fortunato, E; Vilarinho, P; Perreira, L; Martins, R; Zhang, S, Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Ciencia Mat, Campus Caparica, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
	2006
会议名称	3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM)
会议录名称	ADVANCED MATERIALS FORUM III丛书标题: MATERIALS SCIENCE FORUM
页码	PTS 1 AND 2 514-516: 18-22 Part 1-2
会议日期	MAR 20-23, 2005
会议地点	Aveiro, PORTUGAL
出版地	BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
部门归属	univ nova lisboa, fac ciencias & tecnol, dept ciencia mat, p-2829516 caparica, portugal; uninova, cemop, p-2829516 caparica, portugal; chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, beijing 100083, peoples r china; univ aveiro, dept ceram & glass engn, p-3810193 aveiro, portugal
摘要	A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.
关键词	Silicon Carbide High Temperature Annealing Thin Film Silicon Pecvd
学科领域	半导体材料
主办者	Portuguese Mat Soc.; Mat Network Atlantic Arc.; CiCECO.; BPI.; Bayer Mat Sci.; DURIT.; IZASA.; GIC.; Novagres.; Rauschert.; CRIOLAB CRYOGENICS Vacuum Syst Vacuum Chambers.; FCT.; NTI EUROPE.; Fdn Calouste Gulbenkian.; ScienTec.; ThermoLab.; Papelave.; cienciapt net.; Air Liquide. Univ Aveiro
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10020
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang, S, Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Ciencia Mat, Campus Caparica, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
推荐引用方式 GB/T 7714	Zhang, S,Hu, Z,Raniero, L,et al. The study of high temperature annealing of a-SiC : H films[C]. BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2006:PTS 1 AND 2 514-516: 18-22 Part 1-2.

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