Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well

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	Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well
	Fan WJ; Abiyasa AP; Tan ST; Yu SF; Sun XW; Xia JB; Yeo YC; Li MF; Chong TC; Fan, WJ, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
	2006
会议名称	3rd International Conference on Materials for Advanced Technologies (ICMAT-2005)/9th International Conference on Advanced Materials (ICAM 2005)
会议录名称	JOURNAL OF CRYSTAL GROWTH
页码	287 (1): 28-33
会议日期	JUL 03-08, 2005
会议地点	Singapore, SINGAPORE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	nanyang technol univ, sch elect & elect engn, singapore 639798, singapore; chinese acad sci, inst semicond, beijing 10083, peoples r china; natl univ singapore, dept elect & comp engn, singapore 119260, singapore
摘要	The band structures of wurtzite ZnO are calculated using the empirical pseudopotential method (EPM). The 8 parameters of the Zn and O atom pesudopotential form factors with Schluter's formula are obtained. The effective mass parameters are extracted by using k.p Hamiltonian to fit the EPM results. The calculated band edge energies (E-g, E-A, E-B, and E-C) at Gamma point are in good agreement with experimental results. The ordering of ZnO at the top of valence band is found to be A(Gamma(7))-B(Gamma(9))-C(Gamma(7)) due to a negative spin-orbit (SO) splitting. Based on the band parameters obtained, the valence hole subbands of wurzite ZnO/MgxZn1-xO tensile-strained quantum wells (QWs) with different well widths and Mg compositions are calculated using 6-band k.p method. (c) 2005 Elsevier B.V. All rights reserved.
关键词	Computer Simulation
学科领域	半导体物理
主办者	Int Union Mat Res Soc.; Mat Res Soc Singapore.; Suntec Int Convent & Exhibit Ctr.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10050
专题	中国科学院半导体研究所（2009年前）
通讯作者	Fan, WJ, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
推荐引用方式 GB/T 7714	Fan WJ,Abiyasa AP,Tan ST,et al. Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:287 (1): 28-33.

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