A silicon light emitting devices in standard CMOS technology

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A silicon light emitting devices in standard CMOS technology
	Chen HD; Sun ZH; Liu HJ; Gao P; Chen, HD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2004
会议名称	1st IEEE International Conference on Group IV Photonics
会议录名称	2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
页码	83-85
会议日期	SEP 29-OCT 01, 2004
会议地点	Hong Kong, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8474-1
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	A silicon light emitting device is designed and simulated. It is fabricated in 0.6 mum standard CMOS technology. The device can give more than 1 muW optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V The external electrical-optical conversion efficiency is more than 10(-6). The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.
学科领域	光电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10058
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen, HD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Chen HD,Sun ZH,Liu HJ,et al. A silicon light emitting devices in standard CMOS technology[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:83-85.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2412.pdf（171KB）			限制开放	--	请求全文