High-mobility Ga-polarity GaN achieved by NH3-MBE

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High-mobility Ga-polarity GaN achieved by NH3-MBE
	Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY; Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
	2003
会议名称	Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting
会议录名称	GAN AND RELATED ALLOYS-2002, 743
页码	85-90
会议日期	DEC 02-06, 2002
会议地点	BOSTON, MA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-680-X
部门归属	chinese acad sci, inst semicond, mat ctr, beijing 100083, peoples r china
摘要	GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.
关键词	Molecular-beam Epitaxy Ion-scattering Spectroscopy Lattice Polarity Single-crystals Films Polarization Gan(0001) Surfaces Growth Diodes
学科领域	半导体材料
主办者	Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13625
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang JX,Wang XL,Sun DZ,et al. High-mobility Ga-polarity GaN achieved by NH3-MBE[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,2003:85-90.

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