Strong red light emission from silicon nanocrystals embedded in SIO2 matrix
Chen WD; Wang YQ; Chen CY; Diao HW; Liao XB; Kong GL; Hsu CC; Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
2002
会议名称Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
会议录名称COMMAD 2002 PROCEEDINGS
页码267-270
会议日期DEC 11-13, 2002
会议地点SYDNEY, AUSTRALIA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN0-7803-7571-8
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.
关键词Photoluminescence Luminescence Spectroscopy Deposition
学科领域半导体材料
主办者Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13643
专题中国科学院半导体研究所(2009年前)
通讯作者Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式
GB/T 7714
Chen WD,Wang YQ,Chen CY,et al. Strong red light emission from silicon nanocrystals embedded in SIO2 matrix[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:267-270.
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