Preparation and characterization of erbium doped sol-gel silica glasses

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Preparation and characterization of erbium doped sol-gel silica glasses
	Lei HB; Yang QQ; Ou HY; Chen BW; Yu JZ; Wang QM; Xie DT; Wu JG; Xu DF; Xu GX; Lei HB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1999
会议名称	Conference on Rare-Earth-Doped Materials and Devices III
会议录名称	RARE-EARTH-DOPED MATERIALS AND DEVICES III, 3622
页码	74-80
会议日期	JAN 27-28, 1999
会议地点	SAN JOSE, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3092-7
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.
关键词	Er-doped Silica Glass Sol-gel Process Photoluminescence Planar Wave-guides Molecular-beam Epitaxy Crystal Silicon Implanted Si Luminescence Electroluminescence Fabrication Impurities Films Ions
学科领域	半导体材料
主办者	SPIE.; Def Adv Res Projects Agcy.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13783
专题	中国科学院半导体研究所（2009年前）
通讯作者	Lei HB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Lei HB,Yang QQ,Ou HY,et al. Preparation and characterization of erbium doped sol-gel silica glasses[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1999:74-80.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2969.pdf（461KB）			限制开放	--	请求全文