Asymmetric dark current in double barrier quantum well infrared photodetectors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Asymmetric dark current in double barrier quantum well infrared photodetectors
	Zhuang QD; Li JM; Lin LY; Zhuang QD Chinese Acad Sci Inst Semicond Ctr Semicond Mat POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Conference on Infrared Spaceborne Remote Sensing VI
会议录名称	INFRARED SPACEBORNE REMOTE SENSING VI, 3437
页码	391-395
会议日期	JUL 22-24, 1998
会议地点	SAN DIEGO, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-2892-2
部门归属	chinese acad sci, inst semicond, ctr semicond mat, beijing 100083, peoples r china
摘要	Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.
关键词	Dark Current Quantum Well Infrared Photodetector Mu-m Performance Detectors Array
学科领域	半导体材料
主办者	SPIE Int Soc Opt Engn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13789
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhuang QD Chinese Acad Sci Inst Semicond Ctr Semicond Mat POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhuang QD,Li JM,Lin LY,et al. Asymmetric dark current in double barrier quantum well infrared photodetectors[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:391-395.

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