Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing
Wang YQ; Liao XB; Diao HW; He J; Ma ZX; Yue GZ; Shen SR; Kong GL; Zhao YW; Li ZM; Yun F; Wang YQ Chinese Acad Sci Inst Semicond State Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
1999
会议名称Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting
会议录名称AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507
页码975-980
会议日期APR 14-17, 1998
会议地点SAN FRANCISCO, CA
出版地506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者MATERIALS RESEARCH SOCIETY
ISSN0272-9172
ISBN1-55899-413-0
部门归属chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china
摘要A novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.
关键词Amorphous-silicon Crystallization Transistors
学科领域半导体材料
主办者Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13801
专题中国科学院半导体研究所(2009年前)
通讯作者Wang YQ Chinese Acad Sci Inst Semicond State Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
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GB/T 7714
Wang YQ,Liao XB,Diao HW,et al. Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1999:975-980.
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