Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT
	Zhang XH; Yang YF; Wang ZG; Zhang XH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	1997
会议名称	1997 IEEE Hong Kong Electron Devices Meeting
会议录名称	1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS
页码	114-116
会议日期	35672
会议地点	HONG KONG, HONG KONG
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-3802-2
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of InAlAs/InGaAs HEMT are discussed.
学科领域	半导体物理
主办者	IEEE Electron Devices Soc.; City Univ Hong Kong, Dept Electr Engn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13841
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang XH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhang XH,Yang YF,Wang ZG,et al. Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,1997:114-116.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
3023.pdf（211KB）			限制开放	--	请求全文