Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures

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	Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures
	Si JJ; Yang QQ; Wang HJ; Wang QM; Si JJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
	1998
会议名称	Conference on Integrated Optoelectronics II
会议录名称	INTEGRATED OPTOELECTRONICS II, 3551
页码	49-52
会议日期	SEP 18-19, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3012-9
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.
关键词	Si/sige Quantum Dot Electroluminescence Photoluminescence
学科领域	光电子学
主办者	SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13863
专题	中国科学院半导体研究所（2009年前）
通讯作者	Si JJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Si JJ,Yang QQ,Wang HJ,et al. Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:49-52.

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