Formation mechanism of defects in annealed InP

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Formation mechanism of defects in annealed InP
	Han YJ; Liu XL; Jiao JH; Lin LY; Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	SPIE Conference on Optoelectronic Materials and Devices
会议录名称	OPTOELECTRONIC MATERIALS AND DEVICES, 3419
页码	346-353
会议日期	JUL 09-11, 1998
会议地点	TAIPEI, TAIWAN
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-2873-6
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.
关键词	Defects Formation Hydrogen Related Defects Semi-insulating Inp
学科领域	光电子学
主办者	SPIE, Taiwan Chapter.; Photon Ind Dev Assoc.; Natl Sci Council, Taiwan.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13875
专题	中国科学院半导体研究所（2009年前）
通讯作者	Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Han YJ,Liu XL,Jiao JH,et al. Formation mechanism of defects in annealed InP[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:346-353.

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