Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)
	Yu JZ; Li C; Cheng BW; Wang QM; Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
	2004
会议名称	10th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003)
会议录名称	GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96
页码	255-260
会议日期	SEP 21-26, 2003
会议地点	BERLIN, GERMANY
出版地	BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	1012-0394
ISBN	3-908450-82-9
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.
关键词	Dbr (Distributed Bragg Reflector) Mqw (Multiple Quantum Wells) Optical Fiber Communication Photodiode Rce-pd (Resonant-cavity-enhanced Photodiode) Responsivity Sige/si Soi
学科领域	光电子学
主办者	IHP Frankfurt.; IHP BTU Joint Lab.; European Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14835
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
推荐引用方式 GB/T 7714	Yu JZ,Li C,Cheng BW,et al. Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)[C]. BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2004:255-260.

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