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Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD | |
Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ; Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China. | |
2002 | |
会议名称 | 10th International Meeting on Ferroelectricity (IMF-10) |
会议录名称 | FERROELECTRICS, 271 |
页码 | 1707-1713 |
会议日期 | SEP 03-07, 2001 |
会议地点 | MADRID, SPAIN |
出版地 | 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND |
出版者 | TAYLOR & FRANCIS LTD |
ISSN | 0015-0193 |
部门归属 | shandong univ, state key lab crystal mat, jinan 250100, peoples r china; shandong univ, dept environm engn, jinan 250100, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
摘要 | The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM). |
关键词 | Bi2ti2o7 Thin Film Mocvd (111) Orientation Chemical-vapor-deposition Crystal Thin-films |
学科领域 | 光电子学 |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/14891 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China. |
推荐引用方式 GB/T 7714 | Wang H,Shang SX,Yao WF,et al. Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD[C]. 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND:TAYLOR & FRANCIS LTD,2002:1707-1713. |
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