Hydrogen behavior in GaN epilayers grown by NH3-MBE

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Hydrogen behavior in GaN epilayers grown by NH3-MBE
	Kong MY; Zhang JP; Wang XL; Sun DZ; Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	2001
会议名称	11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 227
页码	371-375
会议日期	SEP 11-15, 2000
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词	Impurities Molecular Beam Epitaxy Nitrides Semiconducting Iii-v Materials Gallium Nitride Sapphire Substrate Defects Heterostructure Semiconductors Stress
学科领域	半导体材料
主办者	China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14933
专题	中国科学院半导体研究所（2009年前）
通讯作者	Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Kong MY,Zhang JP,Wang XL,et al. Hydrogen behavior in GaN epilayers grown by NH3-MBE[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:371-375.

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