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Epitaxial growth of SiC on complex substrates | |
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY; Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. | |
2001 | |
会议名称 | 11th International Conference on Molecular Beam Epitaxy (MBE-XI) |
会议录名称 | JOURNAL OF CRYSTAL GROWTH, 227 |
页码 | 811-815 |
会议日期 | SEP 11-15, 2000 |
会议地点 | BEIJING, PEOPLES R CHINA |
出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
出版者 | ELSEVIER SCIENCE BV |
ISSN | 0022-0248 |
部门归属 | chinese acad sci, inst semicond, beijing 100083, peoples r china |
摘要 | Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved. |
关键词 | Optical Microscopy X-ray Diffraction Molecular Beam Epitaxy Semiconducting Silicon Compounds Sapphire Deposition Films |
学科领域 | 半导体材料 |
主办者 | China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/14949 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. |
推荐引用方式 GB/T 7714 | Sun GS,Li JM,Luo MC,et al. Epitaxial growth of SiC on complex substrates[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:811-815. |
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