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Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots | |
Li GH; Chen Y; Fung ZL; Ding K; Han HX; Zhou W; Wang ZG; Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. | |
2001 | |
会议名称 | 9th International Conference on High Pressure Semiconductor Physics (HPSP9) |
会议录名称 | PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1) |
页码 | 157-162 |
会议日期 | SEP 24-28, 2000 |
会议地点 | SAPPORO, JAPAN |
出版地 | PO BOX 10 11 61, D-69451 BERLIN, GERMANY |
出版者 | WILEY-V C H VERLAG GMBH |
ISSN | 0370-1972 |
部门归属 | chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
摘要 | The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough. |
关键词 | Hydrostatic-pressure Photoluminescence Gaas Luminescence Growth Insb Gasb |
学科领域 | 半导体物理 |
主办者 | Hokkaido Univ, Grad Sch Sci.; Phys Soc Japan.; Japan Soc High Pressure Sci & Technol. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/14959 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. |
推荐引用方式 GB/T 7714 | Li GH,Chen Y,Fung ZL,et al. Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots[C]. PO BOX 10 11 61, D-69451 BERLIN, GERMANY:WILEY-V C H VERLAG GMBH,2001:157-162. |
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