Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells
Yu GH; Fan XW; Guan ZP; Zhang JY; Zhao XW; Shen DZ; Zheng ZH; Yang BJ; Jiang DS; Chen YB; Zhu ZM; Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
1999
会议名称40th Electronic Materials Conference (EMC-40)
会议录名称JOURNAL OF ELECTRONIC MATERIALS, 28 (5)
页码563-566
会议日期JUN 24-26, 1998
会议地点CHARLOTTESVILLE, VIRGINIA
出版地420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA
出版者MINERALS METALS MATERIALS SOC
ISSN0361-5235
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要Photocurrent (PC) spectra of ZnCdSe-ZnSe double multi-quantum wells are measured at different temperature. Its corresponding photocurrent derivative (PCD) spectra are obtained by computing, and the PCD spectra have greatly enhanced the sensitivity of the relative weak PC signals. The polarization dependence of the PC spectra shows that the transitions observed in the PC spectra are heavy-hole related, and the transition energy coincide well with the results obtained by envelope function approximation including strain. The temperature dependence of the photocurrent curves indicates that the thermal activation is the dominant transport mechanism of the carriers in our samples. The concept of saturation temperature region is introduced to explain why the PC spectra have different temperature dependence in the samples with different structure parameters. It is found to be very useful in designing photovoltaic devices.
关键词Double Multi-quantum Wells Photocurrent Spectra Zncdse-znse Spectroscopy Photoluminescence Heterostructures Photodetectors
学科领域半导体材料
主办者TMS.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15045
专题中国科学院半导体研究所(2009年前)
通讯作者Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
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Yu GH,Fan XW,Guan ZP,et al. Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells[C]. 420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA:MINERALS METALS MATERIALS SOC,1999:563-566.
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