High-concentration hydrogen in unintentionally doped GaN

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High-concentration hydrogen in unintentionally doped GaN
	Zhang JP; Wang XL; Sun DZ; Li XB; Kong MY; Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhangjp@red.semi.ac.cn
	1998
会议名称	2nd International Conference on Nitride Semiconductors (ICNS 97)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 189
页码	566-569
会议日期	OCT 27-31, 1997
会议地点	TOKUSHIMA CITY, JAPAN
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved.
关键词	Gallium Nitride Gas Source Molecular Beam Epitaxy Hydrogen Autodoping Films
学科领域	半导体材料
主办者	Japan Soc Appl Phys.; Inst Electr Informat & Commun Engineers.; IEEE.; Electron Devices Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15079
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhangjp@red.semi.ac.cn
推荐引用方式 GB/T 7714	Zhang JP,Wang XL,Sun DZ,et al. High-concentration hydrogen in unintentionally doped GaN[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:566-569.

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