Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves
	Chen SW; Xu DX; Xu XJ; Tu XG; McKinnon R; Barrios P; Cheben P; Janz SF; Yu JZ; Chen, SW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2007
会议名称	4th IEEE International Conference on Group IV Photonics
会议录名称	2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
页码	123-125
会议日期	SEP 19-21, 2007
会议地点	Tokyo, JAPAN
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-0934-1
部门归属	[chen, shaowu; xu, xuejun; tu, xiaoguang; yu, jinzhong] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	We present detail design considerations and simulation results of a forward biased carrier injection p-i-n modulator integrated on SOI rib waveguides. To minimize the free carrier absorption loss while keeping the comparatively small lateral dimensions of the modulator as required for high speed operation, we proposed two structural improvements, namely the double ridge (terrace ridge) structure and the isolating grooves at both sides of the double ridge. With improved carrier injection and optical confinement structure, the simulated modulator response time is in sub-ns range and absorption loss is minimized.
关键词	Silicon Photonics
学科领域	光电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7864
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen, SW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Chen SW,Xu DX,Xu XJ,et al. Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2007:123-125.

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