中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共3条，第1-3条 帮助

已选(0)清除 条数/页：   排序方式：
无权访问的条目 期刊论文
作者:  Mao, RW;  Tsai, CS;  Yu, JZ;  Wang, QM;  Tsai, CS, Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA. 电子邮箱地址: rwmao@uci.edu;  cstsai@uci.edu;  qmwang@red.semi.ac.cn
Adobe PDF(260Kb)  |  收藏  |  浏览/下载：996/366  |  提交时间：2010/03/08
Single steady frequency and narrow line width external cavity semiconductor laser 会议论文
ADVANCED CHARACTERIZATION TECHNIQUES FOR OPTICS, SEMICONDUCTORS, AND NANOTECHNOLOGIES, 5188, SAN DIEGO, CA, AUG 03-05, 2003
作者:  Zhao WR;  Jiang PF;  Xie FZ;  Zhao WR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1351/257  |  提交时间：2010/10/29
External Cavity Semiconductor Laser  Light Feedback  Single Longitudinal Mode  Spectral Line Width  Feedback  Diode  
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1401/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain