Growth and characterization of semi-insulating GaN films grown by MOCVD

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	Growth and characterization of semi-insulating GaN films grown by MOCVD
	Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM; Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
	2006
会议名称	3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议录名称	JOURNAL OF RARE EARTHS
页码	24: 14-18 Sp. Iss. SI
会议日期	OCT 16-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA
出版者	METALLURGICAL INDUSTRY PRESS
ISSN	1002-0721
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.
关键词	Mocvd
学科领域	半导体材料
主办者	Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10030
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
推荐引用方式 GB/T 7714	Fang, CB,Wang, XL,Hu, GX,et al. Growth and characterization of semi-insulating GaN films grown by MOCVD[C]. 2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA:METALLURGICAL INDUSTRY PRESS,2006:24: 14-18 Sp. Iss. SI.

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