Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells
	Deng X; Wang W; Han S; Povolny H; Du W; Liao X; Xiang X; Liao X Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
	2002
会议名称	International Conference on Material for Advanced Technologies
会议录名称	INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2)
页码	57-63
会议日期	JUL 01-06, 2001
会议地点	SINGAPORE, SINGAPORE
出版地	JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
ISSN	0217-9792
部门归属	chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, beijing 100083, peoples r china; univ toledo, dept phys & astron, toledo, oh 43606 usa
摘要	This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The player consists of nanometer-sized Si crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V-infinity=1.045 V and FF=70.3 %, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells arc discussed on the bases of the density-functional approach and the AMPS model.
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14905
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liao X Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Deng X,Wang W,Han S,et al. Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:57-63.

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