Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G

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	Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G
	Chen P; Lib SP; Tu XG; Zuo YH; Zhao L; Chen SW; Li JC; Lin W; Chen HY; Liu DY; Kang JY; Yu YD; Yu JZ; Wang QM; Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2008
会议名称	6th International Conference on Thin Film Physics and Applications
会议录名称	THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE
页码	6984: G9841-G9841
会议日期	SEP 25-28, 2007
会议地点	Shanghai, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7182-6
部门归属	[chen, p.; lib, s. p.; tu, x. g.; zuo, y. h.; zhao, l.; chen, s. w.; yu, y. d.; yu, j. z.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	The linear electro-optic (Pockels) effect of wurtzite gallium nitride (GaN) films and six-period GaN/AlxGa1-xN superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (MOCVD). The measured coefficients of the GaN/AlxGa1-xN superlattices are much larger than those of bulk material. Taking advantage of the strong field localization due to resonances, GaN/AlxGa1-xN SL can be proposed to engineer the nonlinear responses.
关键词	Pockels Effect
学科领域	光电子学
主办者	Shanghai Jiao Tong Univ, Dept Phys.; Natl Nat Sci Fdn China.; Chinese Phys Soc.; Shanghai Phys Soc.; SPIE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7784
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Chen P,Lib SP,Tu XG,et al. Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6984: G9841-G9841.

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