Fabrication of improved FD SOIMOSFETs for suppressing edge effect

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Fabrication of improved FD SOIMOSFETs for suppressing edge effect
	Wang, N; Li, N; Liu, ZL; Yu, F; Li, GH; Wang, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2008
会议名称	9th International Conference on Solid-State and Integrated-Circuit Technology
会议录名称	2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
页码	VOLS 1-4: 231-234
会议日期	OCT 20-23, 2008
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-2185-5
部门归属	[wang, ningjuan; liu, zhongli] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect, that is, the leakage current called hump is generated in the subthreshold region. According to different reasons for generating the edge effect, rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully.
关键词	Soi Mosfet
学科领域	微电子学
主办者	IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8270
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang, N,Li, N,Liu, ZL,et al. Fabrication of improved FD SOIMOSFETs for suppressing edge effect[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-4: 231-234.

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