Knowledge Management System Of Institute of Semiconductors,CAS
| Growth behavior of AlInGaN films | |
| Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K; Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. | |
| 2009 | |
| 会议名称 | 4th Asian Conference on Crystal Growth and Crystal Technology |
| 会议录名称 | JOURNAL OF CRYSTAL GROWTH |
| 页码 | 311 (3): 474-477 JAN 15 |
| 会议日期 | MAY 21-24, 2008 |
| 会议地点 | Sendai, JAPAN |
| 出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 出版者 | ELSEVIER SCIENCE BV |
| ISSN | 0022-0248 |
| 部门归属 | [shang, j. z.; zhang, b. p.; mao, m. h.; cai, l. e.; zhang, j. y.; fang, z. l.; liu, b. l.; yu, j. z.; wang, q. m.] xiamen univ, dept phys, xiamen 361005, peoples r china; [shang, j. z.; zhang, b. p.; mao, m. h.; cai, l. e.; zhang, j. y.; fang, z. l.; liu, b. l.; yu, j. z.; wang, q. m.] xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china; [zhang, j. y.; yu, j. z.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [kusakabe, k.; ohkawa, k.] tokyo univ sci, dept appl phys, shinjuku ku, tokyo 1628601, japan |
| 摘要 | The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved. |
| 关键词 | Scanning Electron Microscope |
| 学科领域 | 光电子学 |
| 主办者 | Intelligent Cosmos Acad Fdn.; Murata Sci Fdn.; SendaiTourism & Convent Bureau. |
| 收录类别 | 其他 |
| 语种 | 英语 |
| 文献类型 | 会议论文 |
| 条目标识符 | http://ir.semi.ac.cn/handle/172111/8324 |
| 专题 | 中国科学院半导体研究所（2009年前） |
| 通讯作者 | Zhang, BP, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Shang JZ,Zhang BP,Mao MH,et al. Growth behavior of AlInGaN films[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2009:311 (3): 474-477 JAN 15. |
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