Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
	Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin); Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2006
会议名称	International Conference on Silicon Carbide and Related Materials (ICSCRM 2005)
会议录名称	Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM
页码	Pts 1 and 2 527-529: 191-194
会议日期	SEP 18-23, 2005
会议地点	Pittsburgh, PA
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISBN	ISSN: 0255-5476
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.
关键词	Homoepitaxial Growth Low-pressure Hot-wall Cvd Structural And Optical Characteristics Intentional Doping Schottky Barrier Diodes
学科领域	半导体材料
主办者	Aixtron.; Cree Inc.; Dow Corning.; GE Global Res Ctr.; II VI, Inc.; Intrins Semicond.; KLA Tencor.; SiCED.; SiCrystal AG.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9788
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Sun, GS ,Ning, J ,Gong, QC ,et al. Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2006:Pts 1 and 2 527-529: 191-194.

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