Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation

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	Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation
	Islam MR; Chen NF; Yamada M; Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, La Jolla, CA 92037 USA.
	2004
会议名称	13th International Conference on Semiconducting and Insulating Materials (SIMC XIII)
会议录名称	SMIC-XIII 2004 13TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS
页码	185-188
会议日期	SEP 20-25, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8668-X
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Raman scattering measurements have been performed in diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation, deposition, and post-annealing technique. It is found that the Raman spectrum measured from the implanted surface of the sample shows some new weak modes in addition to the GaAs-like modes which are observed from the unimplanted surface. The new vibrational modes observed are assigned to MnAs-like modes. The coupled LO-phonon plasmon mode, and Mn and As related vibrational modes caused by Mn-ion implantation, deposition, and post-annealing are also observed. Furthermore, the GaAs-like modes are found to be shifted by approximately 4 cm(-1) in the lower frequency side, compared with those observed from the unimplanted surface.
学科领域	半导体材料
主办者	IEEE Electron Devices Soc.; Chinese Acad Sci.; Natl Nat Sci Fdn China.; Hakuto Co Ltd.; Shenzhen Oceans King Investment Imp & Exp Co.; Shenzhen Refond Opt ELE Co Ltd.; Jiangsu Nata Optoelect Mat Co Ltd.; Beijing Univ Technol.; Gen Res Inst Nnferrous Mat.; Nanjing Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Shanghai Inst Microsyst & Informat Technol.; Sun Yat Univ.; Zhejiang Univ.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9924
专题	中国科学院半导体研究所（2009年前）
通讯作者	Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, La Jolla, CA 92037 USA.
推荐引用方式 GB/T 7714	Islam MR,Chen NF,Yamada M,et al. Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:185-188.

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