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无权访问的条目 期刊论文
作者:  Yang, CB;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Hu, GX;  Wang, XH;  Zhang, XB;  Li, MP;  Li, JM;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.en
Adobe PDF(234Kb)  |  收藏  |  浏览/下载:1381/448  |  提交时间:2010/03/08
无权访问的条目 期刊论文
作者:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang XH;  Zhang Z;  Wang ZG;  Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(249Kb)  |  收藏  |  浏览/下载:1026/314  |  提交时间:2010/08/12
Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT 会议论文
1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, HONG KONG, HONG KONG, 35672
作者:  Zhang XH;  Yang YF;  Wang ZG;  Zhang XH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(211Kb)  |  收藏  |  浏览/下载:1140/246  |  提交时间:2010/10/29